Nanostructuring of chalcogenide materials: a pathway to enhanced optoelectronic performance

Chalcogenides have gained prominence in recent years with a focus in optoelectronics due to their tunable bandgaps, phase-change abilities, and infrared applications. However, bulk chalcogenides are not as efficient as nanostructured materials that tailor the material’s morphology, structure, and interfacial dynamics. This paper reviews recent advancements in chalcogenide nanostructures based on dimensionality (0D, 1D/3D, 2D) and analyzes how different synthesis and characterization techniques are used to describe the optoelectronic enhancements such as photoluminescence efficiency, bandgap changes, carrier charge mobility, stability, among many others. This paper provides a framework for future designs of optoelectronic devices using scientific advancement in future systems.