High‐Frame‐Rate Display Using Short‐Channel‐Length Crystal IO FET on Backplane

We demonstrated that a transistor incorporating crystal indium oxide (IO) in the active layer, even with a channel length of 1.5 μm, exhibits normally off characteristics and a mobility of 72.4 cm 2 /Vs. Using this active layer, we fabricated a display and its scan driver with field‐effect transistors (FETs) capable of 120‐Hz (8K4K) and 240‐Hz (4K2K) operation, both achieving lower power consumption than displays employing IGZO in the active layer. With the anticipated demand for displays with higher frame rates and reduced power consumption in future devices, such as AI‐enabled smartphones, the crystal IO FET emerges as a promising candidate for backplane applications that address these requirements.