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Erratum to “Comprehensive Experimental and Simulation Study of Six 1.2kV SiC MOSFET Layout Topologies”

S. deBoer, Seung Yup Jang, A. Morgan, W. Sung

2026.1.1IEEE Journal of the Electron Devices Society

DOI: 10.1109/jeds.2026.3658907

Abstract

Presents corrections to the paper, (Comprehensive Experimental and Simulation Study of Six 1.2kV SiC MOSFET Layout Topologies).

Citation format

DEBOER, S., et al. Erratum to “comprehensive experimental and simulation study of six 1.2kv sic MOSFET layout topologies”. IEEE Journal of the Electron Devices Society, 2026, 14: 204.