Phase-change materials and chalcogenidesSolid-state spectroscopy and crystallographyChalcogenide Semiconductor Thin Films

Piyush Patel, S. M. Vyas, V. Patel, R. Varasada, H. Pavagadhi, M. Jani

2026.2.24FERROELECTRICS

DOI: 10.1080/00150193.2026.2616075

Abstract

Dielectric and impedance spectroscopy (20 Hz–2 MHz) of Bridgman-grown In2Se2.7Sb0.3 crystals reveals that Sb doping significantly alters electrical properties. Findings include strong low-frequency electrode polarisation, non-Debye relaxation, and conductivity transitioning from DC to correlated barrier hopping. The electric modulus formalism resolved two distinct grain and grain-boundary relaxation processes, which were not separable in the impedance data. These insights highlight Sb’s role in modifying the polarisation dynamics and charge transport in In2Se3 for advanced optoelectronic applications.

Citation format

PATEL, Piyush, et al. Advanced dielectric and impedance spectroscopy of in 2 se 2. 7 sb 0. . FERROELECTRICS, 2026: 1–14.