GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor TechnologiesAdvanced Power Amplifier Design

10 kW inverter with vertical-GaN trench MOSFETs and its operation instability related to MOS interface

J. Nishii, K. Hasegawa, N. Tanaka, T. Niwa, H. Tadano, T. Narita, K. Shiozaki

2026.6.1MICROELECTRONICS RELIABILITY

DOI: 10.1016/j.microrel.2026.116124

Abstract

Abstract is not available.

Citation format

NISHII, J., et al. 10 kw inverter with vertical-gan trench MOSFETs and its operation instability related to MOS interface. MICROELECTRONICS RELIABILITY, 2026, 181: 116124.