Phase-change materials and chalcogenidesChalcogenide Semiconductor Thin FilmsSolid-state spectroscopy and crystallography

Y. Azhniuk, V. Lopushansky, V. Loya, S. Hasynets, V. Kryshenik, A. Gomonnai

2026.2.10MOLECULAR CRYSTALS AND LIQUID CRYSTALS

DOI: 10.1080/15421406.2026.2627640

Abstract

Abstract Amorphous (As2S3)1–x(SnS2)x films with x up to 0.055 were prepared by thermal evaporation and studied by Raman spectroscopy. For the films with x ≥ 0.04 Raman measurements at increased laser power density indicate the formation of SnS2 nanocrystals in the course of the measurement. The nanocrystals are formed due to a drastic drop of the glass viscosity and photoenhanced diffusion of atoms in the laser spot. Although this process is generally governed by a nonthermal mechanism, it is shown that thermal effects also contribute to the mechanism of formation of SnS2 nanocrystals in the amorphous films.

Citation format

AZHNIUK, Y., et al. Formation of sns2 nanocrystals in amorphous (as2s3)1–x(sns2)x films studied by raman spectroscopy. MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2026, 770(6): 907–919.