MXene-MoS2 engineered heterostructured vertical memristors array: high-performance non-volatile memory with scalable integration

Abstract The emergence of artificial intelligence and neuromorphic computing has revealed the importance of two-dimensional (2D) layered materials in the field of non-volatile memory technologies. Based on the available literature, this is the very first report demonstrating the integration of 2D Transition Metal Carbide MXenes, i.e. Titanium Carbide (Ti 3 C 2 T x ) and Vanadium Carbide (V 2 CT x ) with MoS 2 from the Transition Metal Dichalcogenide family for memristor devices. The nanoscale Ti 3 C 2 T x and V 2 CT x MXene were employed as the bottom electrodes (as independent as well as bi-electrode combination) deposited uniformly on the substrate, along with the successful transfer of Chemical Vapor Deposition grown few-layers MoS 2 onto the nano-ranged sheets of MXene with Ag utilized as the top electrode. Raman analysis and Optical microscopy images indicated the fabrication of the novel best-yielding device Ti 3 C 2 /V 2 C/MoS 2 /Ag structure with high fidelity. Additionally, current-voltage (I-V) analysis showcased bipolar resistive switching phenomena comprising of an efficiently low SET voltage of 0.6 V, endurance of up-to 3000 cycles and retention of over 10 3 seconds, extrapolated over million seconds. The stability of SET/RESET voltages, cycle-to-cycle and device-to-device reproducibility is demonstrated by 18 devices for a memristor array of (5 ×5), emphasizing the unexplored potential of MXene and MoS 2 based memristors for the scalable and large-area integration of devices in future memristors. Furthermore, Ti 3 C 2 /V 2 C/MoS 2 /Ag memristor also exhibited synaptic features of potentiation and depression showcasing potential to be employed in neuromorphic computing techniques.