WO 3 Nanocomposite Diode for Future Semiconductor Technologies

This study presents a novel WO3nanocomposite diode (p-Ag-WO 3 /n-WO 3 ) fabricated using chemically synthesised n-WO 3 nanoparticles and p-Ag-WO 3 nanocomposite. The dip-coating technique was used to form a stable p-n junction. The detailed electrical analysis was performed, including I-V, C-V and impedance analysis to explore its potential in various semiconductor technologies such as electronics, optoelectronics, and volatile memory. Results are promising, indicating its application as a rectifying diode with photodetection capabilities. The detailed current conduction mechanism provides support for its possible application in non-volatile memory. In conclusion, this study highlights the versatility of WO 3 and its nanocomposites in next-generation semiconductor applications.