Influence of Processing Method on the Multiple Resonance of Amorphous Co$_{84.5}$Nb$_{7.5}$Zr$_{8}$ Thin Films

A Co-Nb-Zr amorphous soft magnetic thin-film can be prepared to have in-plane uniaxial magnetic anisotropy and low coercivity. Various methods have been reported for inducing this anisotropy in sputter-deposited amorphous thin films. Among these, magnetic field sputtering and magnetic field annealing are well-known and industrially viable techniques. Magnetic field sputtering is a deposition method that applies a static magnetic field during the sputtering process. In contrast, magnetic field annealing is a post-deposition heat treatment performed in a static magnetic field. While both techniques are effective in inducing low-coercivity uniaxial magnetic anisotropy in Co-Nb-Zr amorphous soft magnetic thin-films, the resulting electrical device properties differ in ways that cannot be explained solely by the difference in the anisotropy field (H k ). In this study, we reveal a distinct difference in the internal magnetic structure that arises from these two induction processes. This is accomplished by comparing the multi-resonance properties of the high-frequency permeability of Co 84.5 Nb 7.5 Zr 8 films, which possess a positive magnetostriction coefficient.