C. Wetzel, D. M. Lee, S. Sheludiakov, J. Ahokas, S. Vasiliev, V. Khmelenko

2026.2.9JOURNAL OF LOW TEMPERATURE PHYSICS

DOI: 10.1007/s10909-026-03375-x

Abstract

The recombination rates of D atoms in solid D 2 films were measured in the tempera- ture range 0.23–1.64 K . Atoms were formed in thin D 2 films by maintaining radio- frequency discharge above the film surface for several days. After stopping discharge the decay of D atoms concentrations was monitored at different temperatures by the method of electron spin resonance (ESR). Decreasing the films temperature from 1.64 to 0.23 K resulted in reducing the recombination rate from 7.2 × 10−26 cm3s−1 to 1.0 × 10−27 cm3s−1.

Citation format

WETZEL, C., et al. Recombination rate of d atoms in solid d2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$_2$$\end{document} in the tem. JOURNAL OF LOW TEMPERATURE PHYSICS, 2026, 222.