Field plate multi-finger diamond MOSFET with ampere-class current capability and a breakdown voltage of 550 V

The field plate structure is effective technique for improving breakdown characteristics. In this work, the gate field plate (GFP) diamond metal-oxide-semiconductor field-effect transistor (MOSFET) satisfied with both ampere-class current capability and high breakdown voltage is demonstrated for the first time. The maximum drain current of fabricated device was 0.82 A with breakdown voltage of 550 V. From double pulse test, the rise time and fall time are 56 ns and 15 ns, respectively, even at supply voltage of −200 V and drain current of 1 A. These results indicate that diamond MOSFET is promising for power devices.