X-RAY SPECTROSCOPY OF SILICON DOPED WITH GERMANIUM ATOMS

This paper presents X-ray diffraction results of p-Si doped with germanium and tin atoms. It was found that after heat treatment of the initial silicon sample at a temperature of 1100°C, a new energetically favorable direction of crystallites appears. It was determined that germanium and silicon atoms form bonds in high-potential regions of the silicon crystal lattice and this leads to a deterioration in its monocrystallinity, that is, to an increase in the number of polycrystalline regions. It has been discovered that tin atoms in silicon combine with oxygen atoms and form SnO2 crystallites in the crystal lattice and this leads to an improvement in the monocrystallinity of silicon.