Features of the microstructure and dielectric properties of Sr0.6Ba0.4Nb2O6/SrRuO3 films on MgO substrates of various orientations

Abstract Thin films of the ferroelectric relaxor Sr0.6Ba0.4Nb2O6 were grown by RF cathode sputtering on MgO(001) and MgO(110) substrates with a predeposited SrRuO3 layer. It was shown that in both cases the composition of the grown films corresponded to stoichiometric proportions, while the surface relief and cross-section differed significantly. It was found that the substrate orientation strongly influences both the magnitude and mechanisms of leakage currents in Sr0.6Ba0.4Nb2O6 films, and in both cases, it was possible to form polarized regions. The reasons for the identified regularities are discussed.