Magnetoconductivity and Quantum Interaction Mechanisms in 2D SiGe Heterostructures

This paper offers a comprehensive analysis of the behavior of electrical magnetoconductivity in 2D p-Si/SiGe/Si heterostructures at very low temperatures. We examined the mechanisms of electrical conduction based on the theories of weak localization (WL) and electron-electron interactions (EEI) in the diffusive regime. The results observed between 0.3 and 1.8 K confirm the validity of existing theories. They also show that the influence of the magnetic field on carrier-carrier interactions, particularly through the triplet effect, follows a logarithmic relationship with the Fermi liquid constant. This study highlights the impact of quantum interactions on conductivity and aids in better understanding the behavior of low-dimensional materials subjected to magnetic fields.