GaN‐Based Red Resonant Cavity Light‐Emitting Diode up to 673 nm

We successfully fabricated GaN‐based red resonant‐cavity light‐emitting diodes by using two dielectric distributed Bragg reflectors as the top and bottom reflector mirrors. The device exhibited resonant modes up to 673 nm, being the longest emission wavelength ever reported for a GaN‐based microcavity device. This achievement establishes spectral overlap between GaN‐based light‐emitting devices and GaAs‐based devices. This work contributes significantly to the development of GaN‐based microcavity devices in longer wavelengths.