Radiation Effects in ElectronicsAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devices

Radiation effect in FD-SOI nanowire FETs due to high dose rate gamma-ray under variable irradiation temperatures

Jong-Heon Ha, Minki Suh, Minsang Ryu, Dabok Lee, Dae-Young Jeon, Jungsik Kim

2026.1.1MICROELECTRONICS RELIABILITY

DOI: 10.1016/j.microrel.2025.115957

Abstract

Abstract is not available.

Citation format

HA, Jong-Heon, et al. Radiation effect in FD-SOI nanowire FETs due to high dose rate gamma-ray under variable irradiation temperatures. MICROELECTRONICS RELIABILITY, 2026, 176: 115957.