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GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor TechnologiesAdvanced Power Amplifier Design

Geometrical and thermal effects on mobility and analog parameters of AlGaN/GaN HEMTs on silicon substrates

Maria Glória Caño de Andrade, Braz Baptista Júnior, E. C. Panzo, Rodrigo T. Doria, Renan Trevisoli, E. Simoen

2026.2.1SOLID-STATE ELECTRONICS

DOI: 10.1016/j.sse.2025.109316

Abstract

Abstract is not available.

Citation format

ANDRADE, Maria Glória Caño de, et al. Geometrical and thermal effects on mobility and analog parameters of algan/gan HEMTs on silicon substrates. SOLID-STATE ELECTRONICS, 2026, 232: 109316.