Semiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignCopper Interconnects and Reliability
Chunmiao Yan, Yi Zhao
2026.1.1IEEE ELECTRON DEVICE LETTERS
Abstract
In this work, the trap generation behaviors under off-state TDDB are comprehensively studied for advanced FinFETs. The results show that electron traps in the high-<inline-formula> <tex-math notation="LaTeX">$k$ </tex-math></inline-formula> gate dielectric layer are responsible for the gate dielectric breakdown. In addition, the correlation between the spatial distribution of traps and the stress electric field is experimentally established and further validated using the matrix percolation model.
Citation format
YAN, Chunmiao; ZHAO, Yi. New insights into trap generation under off-state TDDB for advanced finfets. IEEE ELECTRON DEVICE LETTERS, 2026, 47(1): 9–12.