Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures

Cryogenic characterization and modeling of two nanometer bulk CMOS technologies (0.16- $\mu \text{m}$ and 40-nm) are presented in this paper. Several devices from both technologies were extensively characterized at temperatures of 4 K and below. Based on a detailed understanding of the device physics at deep-cryogenic temperatures, a compact model based on MOS11 and PSP was developed. In addition to reproducing the device dc characteristics, the accuracy and validity of the compact models are demonstrated by comparing time- and frequency-domain simulations of complex circuits, such as a ring oscillator and a low-noise amplifier, with the measurements at 4 K.