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Materials ScienceEngineeringComputer Science

Recent Progress in Phase-Change Memory Technology

G. Burr, M. BrightSky, A. Sebastian, Huai-Yu Cheng, Jau-Yi Wu, Sangbum Kim, N. Sosa, N. Papandreou, H. Lung, H. Pozidis, E. Eleftheriou, C. Lam

2016.4.15IEEE Journal on Emerging and Selected Topics in Circuits and Systems

DOI: 10.1109/jetcas.2016.2547718

tlooto Summary

Two paths towards higher density are discussed: through 3D integration by the combination of PCM and 3D-capable access devices, and through multiple bits per cell, by understanding and managing resistance drift caused by structural relaxation of the amorphous phase.

Abstract

Abstract is not available.

Citation format

BURR, G., et al. Recent progress in phase-change memory technology. IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2016, 6: 146–162.