Open AccessPhysicsMaterials Science

Andor Kormányos, Guido Burkard, Martin Gmitra, Jaroslav Fabian, Viktor Zólyomi, Neil D. Drummond, Vladimir Fal'ko

2014.10.242D Materials

DOI: 10.1088/2053-1583/2/2/022001

Abstract

We present k · p ?> Hamiltonians parametrized by ab initio density functional theory calculations to describe the dispersion of the valence and conduction bands at their extrema (the K, Q, Γ, and M points of the hexagonal Brillouin zone) in atomic crystals of semiconducting monolayer transition metal dichalcogenides (TMDCs). We discuss the parametrization of the essential parts of the k · p ?> Hamiltonians for MoS2, MoSe2, MoTe2, WS2, WSe2, and WTe2, including the spin-splitting and spin-polarization of the bands, and we briefly review the vibrational properties of these materials. We then use k · p ?> theory to analyse optical transitions in two-dimensional TMDCs over a broad spectral range that covers the Van Hove singularities in the band structure (the M points). We also discuss the visualization of scanning tunnelling microscopy maps.

Citation format

KORMÁNYOS, Andor, et al. K.p theory for two-dimensional transition metal dichalcogenide semiconductors [preprint]. arXiv, 2014. arXiv:1410.6666.