Computer ScienceEngineering
Design of sense amplifier for non-volatile memory
L. F. Rahman, M. Reaz, Chang Tae Gyu, M. Marufuzzaman
2013.4.1Revue Roumaine des Sciences Techniques-Serie Electrotechnique et Energetique
tlooto Summary
The proposed design of SA is able to operate under a very low VDD, which is implemented with CEDEC 0.18μm CMOS process within the temperature range from –25C to 125C, and required less power with better performances than other research works.
Abstract
Abstract is not available.
Citation format
RAHMAN, L. F., et al. Design of sense amplifier for non-volatile memory. Revue Roumaine des Sciences Techniques-Serie Electrotechnique et Energetique, 2013, 58: 173–182.