EngineeringMaterials SciencePhysics

Phase change memory

Jing Li, C. Lam

2011Science China-Information Sciences

DOI: 10.1007/s11432-011-4223-x

tlooto Summary

The physics behind this large resistivity contrast between the amorphous and crystalline states in phase change materials is presented and how it is being exploited to create high density PCM is described.

Abstract

Abstract is not available.

Citation format

LI, Jing; LAM, C. Phase change memory. Science China-Information Sciences, 2011, 54: 1061–1072.