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Static-noise margin analysis of MOS SRAM cells

E. Seevinck, F. List, J. Lohstroh

1987.10.1IEEE JOURNAL OF SOLID-STATE CIRCUITS

DOI: 10.1109/jssc.1987.1052809

tlooto Summary

The stability of both resistor-load and full-CMOS SRAM cells is investigated analytically as well as by simulation and it is concluded that full- CMOS cells are much more stable than R-local cells at a low supply voltage.

Abstract

Abstract is not available.

Citation format

SEEVINCK, E.; LIST, F.; LOHSTROH, J. Static-noise margin analysis of MOS SRAM cells. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1987, 22: 748–754.