tlooto
Sign up
Open AccessPhysicsEngineeringMaterials Science

A Graphene Field-Effect Device

M. Lemme, T. Echtermeyer, M. Baus, H. K. A. M. C. Aachen, A. GmbH, Aachen, Germany, Institute of Semiconductor Electronics, Rwth Aachen University

2007.3.8IEEE ELECTRON DEVICE LETTERS

DOI: 10.1109/led.2007.891668

Abstract

In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs

Citation format

LEMME, M., et al. A graphene field-effect device [preprint]. arXiv, 2007. arXiv:cond-mat/0703208.