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Open AccessPhysicsEngineeringMaterials Science

On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration

S. Takagi, A. Toriumi, M. Iwase, H. Tango

1994.12.1IEEE TRANSACTIONS ON ELECTRON DEVICES

DOI: 10.1109/16.337449

Abstract

Abstract is not available.

Citation format

TAKAGI, S., et al. On the universality of inversion layer mobility in si mosfet's: Part i-effects of substrate impurity concentration. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41: 2357–2362.