D. Guo, Zhenping Wu, Peigang Li, Y. An, Han Liu, Xuncai Guo, Hui Yan, Guofeng Wang, Changlong Sun, Linghong Li, Weihua Tang
2014.5.1Optical Materials Express
Abstract
Laser molecular beam epitaxy technology has been employed to deposit β-gallium oxide (β-Ga2O3) on (0001) sapphire substrates. After optimizing the growth parameters, (2¯01)-oriented β-Ga2O3 thin film was obtained. Ultraviolet-visible absorption spectrum demonstrates that the prepared β-Ga2O3 thin film shows excellent solar-blind ultraviolet (UV) characteristic with a band gap of 5.02 eV. A prototype photodetector device with a metal-semiconductor-metal structure has been fabricated using high quality β-Ga2O3 film. The device exhibits obvious photoresponse under 254 nm UV light irradiation, suggesting a potential application in solar-blind photodetectors.
Citation format
GUO, D., et al. Fabrication of β-ga_2o_3 thin films and solar-blind photodetectors by laser MBE technology. Optical Materials Express, 2014, 4: 1067–1076.