High-performance InP-based HEMT millimeter-wave low-noise amplifiers

Quarter-micron InAlAs/InGaAs planar-doped HEMTs (high-electron-mobility transistors) lattice-matched to InP have exhibited state-of-the-art noise and gain performance at frequencies up to 94 GHz. Minimum noise figures of 0.5, 1.2, and 2.1 dB have been measured at 18, 60, and 94 GHz, respectively. Small signal gains as high as 15.4 and 12.0 dB have been obtained at 63 and 95 GHz, respectively. Using 0.25 mu m InP-based HEMTs, a V-band three-stage amplifier yields an average noise figure of 3.0 dB with a gain of 22.0 +or-0.2 dB from 60 to 65 GHz at W-band, a two-stage amplifier exhibits a noise figure of 4.5 dB with a gain of 10.2 dB at 90.4 GHz, and a three-stage amplifier shows a noise figure of 4.8 dB with a gain of 15.0 dB at 90.4 GHz. It is concluded that these results clearly show the great potential of InP-based HEMTs for high-performance millimeter-wave low-noise receiver applications.<<ETX>>