EngineeringPhysicsMaterials Science
Effective Radiation Damage Models for TCAD Simulation of Silicon Bipolar and MOS Transistor and Sensor Structures
O. Konstantin, Kozhukhov Maxim Vladimirovich, P. Dmitriy
Abstract
The special library of radiation damage models for physical parameters and electrical characteristics of bipolar and MOS transistor and sensor structures taking into account neutron, gamma and proton irradiation is developed and built-into Sentaurus Synopsys software tool. For different BJTs/HBTs, MOSFETs and radiation sensors the good agreement to simulated and experimental electrical characteristics is achieved. The RMS error is not more than 10-20 %.
Citation format
KONSTANTIN, O.; VLADIMIROVICH, Kozhukhov Maxim; DMITRIY, P. Effective radiation damage models for TCAD simulation of silicon bipolar and MOS transistor and sensor structures. Sensors and Transducers, 2018, 227: 42–50.