A novel analytical approach for the nonlinear microwave circuits and experimental characterisation of the nonlinear behaviour of a new MESFET device structure

A novel analytical technique is described based on generalized Volterra series to analyze nonlinear microwave and millimeter-wave circuits and devices. This method is especially efficient for general-purpose CAD (computer-aided design) applications and can be easily incorporated into existing CAD programs. Nonlinear S parameters can be defined using this technique to accurately predict circuit performance or device S parameters at the onset of large-signal excitation. The capabilities of the technique have been demonstrated on MESFET structures, designed to reduce the losses due to the high resistance of the gate electrode. Power and intermodulation distortion measurements have been carried out and good agreement with calculated values has been observed.<<ETX>>