EngineeringPhysics

Single event transient (SET) sensitivity of Advanced BiCMOS Technology (ABT) buffers and transceivers

R. Koga, P. Yu, S. Crain, K. Crawford, K. Chao

2002.12.10IEEE Radiation Effects Data Workshop

DOI: 10.1109/redw.2002.1045535

tlooto Summary

Single event transient sensitivity of Advanced BiCMOS Technology buffers and transceivers is presented.

Abstract

Heavy ion induced single event transients for various Advanced BiCMOS Technology (ABT) buffers and transceivers are presented. For our test samples there is a wide variation in the transient sensitivity. Some test samples are sensitive to single event latch-up.

Citation format

KOGA, R., et al. Single event transient (SET) sensitivity of advanced bicmos technology (ABT) buffers and transceivers. IEEE Radiation Effects Data Workshop, 2002: 67–74.