B. Meyerson, D. Harame, J. Stork, E. Crabbé, J. Comfort, G. Patton
1994.9.1International Journal of High Speed Electronics and Systems
tlooto Summary
Researchers fabricated highly controlled silicon:germanium alloy profiles using low-temperature epitaxy and achieved medium-scale integration of SiGe HBT-based IC components.
Abstract
Recent advances in thin film growth techniques, notably the maturation of low temperature silicon epitaxy, have enabled the routine fabrication of highly controlled dopant and silicon:germanium alloy profiles. These capabilities, combined with refinements in heterojunction bipolar transistor designs, have led to the first integrated circuits in the silicon:germanium materials system. Utilizing a commercial (Leybold-AG) UHVCVD tool for SiGe epitaxy on a standard 8" CMOS line, medium scale integration has been achieved, with the first IC components being SiGe HBT based 1 Ghz, 12 bit, digital to analog converters.
Citation format
MEYERSON, B., et al. SILICON:GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS: FROM EXPERIMENT TO TECHNOLOGY. International Journal of High Speed Electronics and Systems, 1994, 05: 473–491.