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Stress induced leakage current limiting to scale down EEPROM tunnel oxide thickness

K. Naruke, S. Taguchi, M. Wada

1988.12.11Technical Digest - International Electron Devices Meeting

DOI: 10.1109/iedm.1988.32846

Abstract

Abstract is not available.

Citation format

NARUKE, K.; TAGUCHI, S.; WADA, M. Stress induced leakage current limiting to scale down EEPROM tunnel oxide thickness. Technical Digest - International Electron Devices Meeting, 1988: 424–427.