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Open AccessEngineeringMaterials SciencePhysics

Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress

Saul Estandia, Nico Dix, Jaume Gazquez, Ignasi Fina, Jike Lyu, Matthew F. Chisholm, Josep Fontcuberta, Florencio Sanchez

2019.7.3ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.9b00256

Abstract

The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic phase of hafnia is proved. Epitaxial bilayers of Hf0.5Zr0.5O2 (HZO) and La0.67Sr0.33MnO3 (LSMO) electr...

Citation format

ESTANDIA, Saul, et al. Engineering ferroelectric hf0.5zr0.5o2 thin films by epitaxial stress [preprint]. arXiv, 2019. arXiv:1909.01563.