Energy Gain From Preloaded ZrO2–PdNi–D Nanostructured CF/LANR Quantum Electronic Components

Previously, we reported that such nanocomposite ZrO2–PdNiD LANR materials have been made into LANR/CF transistors which exhibit energy gain and simultaneous non-thermal near infrared emission. This is accompanied by complicated polariza- tion/transconduction phenomena including an avalanche transconduction electrical breakdown, which has a critical role in excess heat generation. This paper presents a new generation of preloaded LANR (CF) activated nanocomposite ZrO2–PdNiD CF/LANR quantum electronic devices capable of energy gain. These devices dry, glued into electrically conductive, sealed, configurations. The core is ZrO2–(PdNiD) with additional D2 and H2. They are self-contained CF/LANR quantum electronic components containing ZrO2–PdNi–D LANR/CF nanostructured materials which generate significant excess heat from applied electric fields. They also feature two terminals and self-contained superior handling properties enabling portability and transportability. Most importantly, the activation of the desired LANR reactions is, for the first time, separated from the loading of the substrate. Although their develop- ment has required control of their breakdown states and the quenching tendencies of nanostructured materials, these ZrO2–PdNiD CF/LANR quantum electronic devices are potentially very useful because they are reproducible active nanostructured CF/LANR quantum electronic devices.