Open AccessPhysics

Yinan Fang, Pericles Philippopoulos, Dimitrie Culcer, W. A. Coish, Stefano Chesi

2022.10.25Materials for Quantum Technology

DOI: 10.1088/2633-4356/acb87e

Abstract

In recent years, hole-spin qubits based on semiconductor quantum dots have advanced at a rapid pace. We first review the main potential advantages of these hole-spin qubits with respect to their electron-spin counterparts, and give a general theoretical framework describing them. The basic features of spin-orbit coupling and hyperfine interaction in the valence band are discussed, together with consequences on coherence and spin manipulation. In the second part of the article we provide a survey of experimental realizations, which spans a relatively broad spectrum of devices based on GaAs, Si, or Si/Ge heterostructures. We conclude with a brief outlook.

Citation format

FANG, Yinan, et al. Recent advances in hole-spin qubits [preprint]. arXiv, 2022. arXiv:2210.13725.