Analysis of GAA Junction Less NS FET Towards Analog and RF Applications at 30 nm Regime

This research focuses on a quantum model created using an entirely novel nanosheet FET. The standard model describes the performance of a Gate-all-around (GAA) Junction-less (JL) nanosheet device with a gate dielectric of SiO₂ and HfO₂, each having a thickness of 1 nm. The performance of both the classical and quantum models of the GAA nanosheet device is evaluated using the visual TCAD tool, which measures the <italic>I_ON</italic>, <italic>I_OFF</italic>, <italic>I_ON/ I_OFF</italic>, threshold voltage, DIBL, gain parameters (g_m, g_d, A_v), gate capacitance, and cut-off frequency (<italic>f_T</italic>). The device is suited for applications needing rapid switching since it has a low gate capacitance of the order of 10^–18, according to the simulation results. A transconductance (g_m) value of 21 µS and an impressive cut-off frequency of 9.03 GHz are displayed during device analysis. A detailed investigation has also been done into the P-type device response for the same device. Finally, the proposed GAA nanosheet device is used in the inverter model. The NSFET-based inverter, although having higher gate capacitance, has the shortest propagation latency.