SCIEQ2
IEEE TRANSACTIONS ON ELECTRON DEVICES
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
IEEE TRANSACTIONS ON ELECTRON DEVICES is an academic journal published by IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. Identifiers: ISSN 0018-9383, eISSN 1557-9646. Indexed in SCIE. Metrics: JIF 3.2. Subject areas: APPLIED, ELECTRICAL & ELECTRONIC, ENGINEERING, PHYSICS. tlooto lists 30,873 papers from this journal.
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Journal profile
- ISSN
- 0018-9383
- eISSN
- 1557-9646
- Abbreviation
- IEEE T ELECTRON DEV
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Country
- -
Web of Science categories
SCIEAPPLIED, ELECTRICAL & ELECTRONIC, ENGINEERING, PHYSICS
Scopus ASJC categories
No ASJC category data available.
Keywords
Engineering, Electrical & Electronic | Physics, Applied
Papers in this journal
Recent papers
- High-Z Interface Engineering for Enhanced X-Ray Detection in MXene/Si Devices
2026
- Demonstration of Ga
2
O
3
Lateral MOSFET With Integrated Freewheeling Diode for Low-Loss Reverse Conduction
2026
- Multidimensional Theory of Charge Partitioning in Semiconductor Devices
2026
- High-Power Microwave (HPM) Pulses Induced Failure Analysis of the GaN-Based Low-Noise Amplifier
2026 · 1 citations
- Hot Carrier-Assisted Performance Enhancement in ZnO-Based UV Photodetectors Using Plasmonic Au Nanoparticles
2026
Most cited papers
- Large-signal analysis of a silicon Read diode oscillator
1969 · 1,671 citations
- FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
2000 · 1,658 citations
- On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration
1994 · 1,426 citations
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
2001 · 1,403 citations
- Electromigration—A brief survey and some recent results
1969 · 1,362 citations