SCIEQ3
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY is an academic journal published by IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. Identifiers: ISSN 1530-4388, eISSN 1558-2574. Indexed in SCIE. Metrics: JIF 2.3. Subject areas: APPLIED, ELECTRICAL & ELECTRONIC, ENGINEERING, PHYSICS. tlooto lists 2,274 papers from this journal.
CiteScore
-
Scopus の引用指標
SJR
-
SCImago 順位
SNIP
-
出典で正規化した影響度
パーセンタイル順位
-
JIF のパーセンタイル順位
ジャーナルプロフィール
- ISSN
- 1530-4388
- eISSN
- 1558-2574
- 略語
- IEEE T DEVICE MAT RE
- 出版社
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 国
- -
Web of Science の分野
SCIEAPPLIED, ELECTRICAL & ELECTRONIC, ENGINEERING, PHYSICS
Scopus ASJC の分野
ASJC の分野データはありません。
キーワード
Engineering, Electrical & Electronic | Physics, Applied
Papers in this journal
Recent papers
- Electrical Behavior at Cryogenic Temperature of the Radiation-Tolerant Hourglass MOS Transistor
2026
- Stability in Electroluminescence From Ag-NSi Schottky Junction LED: Role of Ambient Oxidation
2026
- Modeling Short- and Long-Term NTC Thermistor Resistance Drift
2026
- Enhanced Stability in Sn-Doped InGaZnO TFTs: The Critical Role of Channel Length and the Dual Effect of Lateral Field Revealed by eMSM Analysis
2026
- Study of the Degradation in p-GaN Gate HEMTs Under Gate Pulse Stress by Transient Current Analysis
2026
Most cited papers
- Radiation-induced soft errors in advanced semiconductor technologies
2005 · 1,584 citations
- Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
2008 · 626 citations
- Review on high-k dielectrics reliability issues
2005 · 519 citations
- Controlling short-channel effects in deep-submicron SOI MOSFETs for improved reliability: a review
2004 · 459 citations
- Soft errors in advanced semiconductor devices-part I: the three radiation sources
2001 · 437 citations