SCIEQ3
IEEE Journal of the Electron Devices Society
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
IEEE Journal of the Electron Devices Society is an academic journal published by IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. Identifiers: ISSN 2168-6734, eISSN 2168-6734. Indexed in SCIE. Metrics: JIF 2.4. Subject areas: ELECTRICAL & ELECTRONIC, ENGINEERING, ENGINEERING, ELECTRICAL & ELECTRONIC. tlooto lists 1,930 papers from this journal.
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Journal profile
- ISSN
- 2168-6734
- eISSN
- 2168-6734
- Abbreviation
- IEEE J ELECTRON DEVI
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Country
- -
Web of Science categories
SCIEELECTRICAL & ELECTRONIC, ENGINEERING
Scopus ASJC categories
No ASJC category data available.
Keywords
Engineering, Electrical & Electronic
Papers in this journal
Recent papers
- Continuum Modeling of High-Field Transport in Semiconductors
2026
- ESD Protection With Sub-3 Ω Dynamic Resistance for Neuromodulation System-on-Chip
2026
- Trap-Based Modeling and Mechanisms of Non-Monotonic Hot-Carrier Degradation in Cryogenic CMOS Devices
2026
- An Improved SVR-Based Broadband Behavioral Model for RF Power Transistors
2026
- Erratum to “Comprehensive Experimental and Simulation Study of Six 1.2kV SiC MOSFET Layout Topologies”
2026
Most cited papers
- Tunnel Field-Effect Transistors: State-of-the-Art
2014 · 556 citations
- Tunnel Field-Effect Transistors: Prospects and Challenges
2015 · 420 citations
- A Review of the Pinned Photodiode for CCD and CMOS Image Sensors
2014 · 397 citations
- Controlling Ambipolar Current in Tunneling FETs Using Overlapping Gate-on-Drain
2014 · 282 citations
- Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures
2018 · 225 citations