SCIEQ2
IEEE ELECTRON DEVICE LETTERS
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
IEEE ELECTRON DEVICE LETTERS is an academic journal published by IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. Identifiers: ISSN 0741-3106, eISSN 1558-0563. Indexed in SCIE. Metrics: JIF 4.5. Subject areas: ELECTRICAL & ELECTRONIC, ENGINEERING, ENGINEERING, ELECTRICAL & ELECTRONIC. tlooto lists 15,942 papers from this journal.
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Journal profile
- ISSN
- 0741-3106
- eISSN
- 1558-0563
- Abbreviation
- IEEE ELECTR DEVICE L
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Country
- -
Web of Science categories
SCIEELECTRICAL & ELECTRONIC, ENGINEERING
Scopus ASJC categories
No ASJC category data available.
Keywords
Engineering, Electrical & Electronic
Papers in this journal
Recent papers
- Demonstration of 2T1C 3D-DRAM With IGZO Vertical Channel Access Transistors for BEOL Monolithic Multi-Deck Stacking
2026
- A Sub-20 mV VTH Hysteresis Enhancement-Mode GaN p-FET With PEALD AlON Gate Dielectric
2026
- New Insights Into Trap Generation Under Off-State TDDB for Advanced FinFETs
2026
- On the In-Situ Dynamic On-Resistance of GaN Power Transistors Under Heavy-Ion Radiations
2026
- Monotonic High-Field Hall Response of Graphene Devices up to 11 T
2026
Most cited papers
- High-performance heat sinking for VLSI
1981 · 4,959 citations
- Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec
2007 · 1,721 citations
- 30-W/mm GaN HEMTs by field plate optimization
2004 · 1,048 citations
- Obtaining the specific contact resistance from transmission line model measurements
1982 · 966 citations
- A Graphene Field-Effect Device
2007 · 956 citations